Novel Graphene Devices by Precision Transfer Method

Hexagonal BN (h-BN) represents the insulator analogue of graphene, sharing identical crystal structure but with B and N atoms each comprising the two sublattices. Owing to its large bandgap, chemical inertness, hexagonal lattice structure (with only 2{\%} lattice mismatch to graphene), planar (i.e. atomically flat) surface structure and good dielectric properties, single crystall h-BN represents a promising alternative to SiO2 as the supporting substrate in graphene FET devices. We discuss our investigation of graphene-BN hybrid devices, realized by precision transfer of mechanically exfoliated graphene and single crystal h-BN flakes. We compare device perfromance of graphene-over-BN with the more conventional graphene-over-SiO2 geometry, and also examine BN as an ultra-thin, crystalline, top-gate dielectric.