Heteroepitaxial Graphene on a Si Substrate Field-Effect Transistor

Electronic and optoelectronic properties of the graphene-backgate transistor are presented. Our transistor was fabricated on graphene film heteroepitaxially formed by the thermal decomposition on the surface of 3C-SiC grown on a Si substrate by organo-silane gas source molecular beam epitaxy. The film consists of a few graphene layers. Although some gate leakage current is observed, the experimental results show that our device works as an n-type transistor as well as an infrared photovoltaic transistor. The graphene channel saturated current is on the order of mA/mm. The estimated effective mobility has its maximum over 6000 cm$^{2}$/(Vs). The photo-responsivity can be achieved up to mA/W. The backgate voltage tuning spectral characteristic is also observed. Heteroepitaxial graphene is a promising material for post-Si CMOS applications.