Studies on single-phase, indium-rich In1-xGaxN epilayers grown by high-pressure CVD

While significant progress in the growth of high quality group III-nitride epitaxial layers has been made during the last decades, the growth of indium rich InGaN epilayers at processing conditions compatible with wide band gap group III-nitrides is still very challenging, especially under low-pressure MOCVD growth conditions. Utilization of elevated pressures to stabilize the growth surface lead to elevated growth temperatures and opened a window for the growth of single-phase material with indium concentrations well above 30{\%}. We present growth conditions and results on structural quality and optical properties of single-phase indium-rich In$_{1-x}$Ga$_{x}$N epilayers. The layers were studied by X-ray diffraction, Raman spectroscopy, atomic force microscopy, optical absorption and IR reflectance spectroscopy, and photoluminescence spectroscopy.