ARPES Study of Quasifreestanding Graphene

Graphene films grown on the carbon face of SiC have been shown to be decoupld from adjacent layers by rotational faults, making this an ideal system to study the electronic properties of freestanding graphene. By using high resolution angle-resolved photoemission spectroscopy, we provide the first full study of the electronic structure, stacking, and many-body interactions of these freestanding samples. We also discuss the evolution of the electronic structure and many body interactions as a function of doping. These results provide critical insights into the intrinsic properties of freestanding graphene sheets.