Bulletin of the American Physical Society
APS March Meeting 2010
Volume 55, Number 2
Monday–Friday, March 15–19, 2010; Portland, Oregon
Session S1: Poster Session III (1:00 pm - 4:00 pm)
1:00 PM,
Wednesday, March 17, 2010
Room: Exhibit CD
Abstract ID: BAPS.2010.MAR.S1.205
Abstract: S1.00205 : Switching transition between bi-stable memory switching and mono-stable threshold switching based on ion migration in a NiO thin film
Preview Abstract
Abstract 
Authors:
Inrok Hwang
(Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea)
Myung-Jae Lee
(Samsung Advanced Institute of Technology, Korea)
Gyoung-Ho Buh
(Semiconductor Exam. Division, Korean Intellectural Property Office, Korea)
Jinsik Choi
(Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea)
Jin-Soo Kim
(Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea)
Sahwan Hong
(Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea)
Sang-ho Jeon
(Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea)
Yeon Soo Kim
(Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea)
Ik-Su Byun
(Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea)
Seung-Woong Lee
(Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea)
Seung-Eon Ahn
(Samsung Advanced Institute of Technology, Korea)
Bo Soo Kang
(Department of Applied Physics, Hanyang University, Korea)
Sung-Oong Kang
(Division of Quantum Phases \& Devices, Department of Physics, Korea)
Bae Ho Park
(Division of Quantum Phases \& Devices, Department of Physics, Korea)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.S1.205
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