Low frequency noise in graphene*

Low frequency, 1/f noise is a poorly understood, commonly occurring phenomenon that is important for sensor technology. Hooge's empirical law describes 1/f noise in an overwhelming number of materials. We have measured 1/f noise in four probe configuration graphene transistors at temperatures ranging from 4 to 300 K. The power spectral density as a function of frequency is found to vary as a function of temperature and gate voltage. Measured 1/f noise will be discussed in terms of Hooge's law and alternative models.