Low - Frequency Noise in Graphene Transistors*

We present the results of the experimental investigation of the low-frequency noise in three-terminal bilayer graphene devices. The quality of graphene layers has been verified with micro-Raman spectroscopy. Back-gated devices were fabricated using electron beam lithography and evaporation. The back-gate was used to adjust electrical conductivity through the graphene layer placed on top of Si/SiO$_{2}$ substrate. The charge neutrality point for examined devices was$\sim $10 V. The noise spectral density was rather low (on the order of $\sim $10E$^{-23}$--10E$^{-22}$ A$^{2}$/Hz at frequency of 1 kHz).The noise reveals generation-recombination (G-R) bulges. Presence of G-R bulges and deviation from the 1/f spectrum suggest that the noise is of carrier-number fluctuation origin due to carrier trapping by defects [1].The low values of the low-frequency noise add validity to the proposed electronic applications of graphene. [1] Q. Shao et al., IEEE EDL (2008).