Experimental studies of the transport in graphene in a parallel magnetic field at low temperatures*

Graphene has remarkable electric properties, and it is also a very promising material for spintronic applications. Most previous experiments, however, were focused on studying graphene devices in perpendicular magnetic field, which quantizes the real-space motion of Dirac electrons in graphene and leads to an unusual quantum Hall effect. Here we will present the results of experimental studies of electric transport in single- and few-layer graphene devices in parallel magnetic field and at low temperatures. The Dirac-point resistance of our graphene devices~was studied as a function of magnetic field and temperature. The effect of tuning the chemical potential under different magnetic fields was also investigated and will be discussed.