Fabrication and measurement of epitaxial graphene nanoribbons

Multi-layer graphene grown epitaxially on the C-terminated ($000\overline{1}$) surface of 4H-SiC in a low vacuum ($\sim 10^{-5}$ Torr), high temperature ($\sim$1420 $^{\circ}$C) induction furnace environment has been shown to be of extremely high quality and mobility. Due to its rotational stacking, the material exhibits electronic properties similar to those of isolated graphene sheets. Lithographic techniques, including electron beam lithography, are explored and sub-20 nm ribbon widths are demonstrated. Transport data for gated epitaxial graphene nanoribbons indicates quantum confinement. More than 100 nanoribbons on a single SiC chip are demonstrated, illuminating a technologically viable path towards graphene electronics.