2009 APS March Meeting
Volume 54, Number 1
Monday–Friday, March 16–20, 2009;
Pittsburgh, Pennsylvania
Session B22: Focus Session: Theory of Spin-based Semiconductor Devices
11:15 AM–2:03 PM,
Monday, March 16, 2009
Room: 324
Sponsoring
Units:
GMAG DMP FIAP
Chair: Lukasz Cywinski, University of Maryland
Abstract ID: BAPS.2009.MAR.B22.1
Abstract: B22.00001 : Role of motive forces for the spin torque transfer for nano-structures*
11:15 AM–11:51 AM
Preview Abstract
Abstract
Author:
Stewart Barnes
(Physics Department, University of Miami)
Despite an announced imminent commercial realization of spin
transfer random access memory (SPRAM) the current theory evolved
from that of Slonczewski [1,2] does not conserve energy. Barnes
and Maekawa [3] have shown, in order correct this defect, forces
which originate from the spin rather than the charge of an
electron must be accounted for, this leading to the concept of
spin-motive-forces (smf) which must appear in Faraday's law and
which significantly modifies the theory for spin-valves and
domain wall devices [4]. A multi-channel theory in which these
smf's redirect the spin currents will be described. In
nano-structures it is now well known that the Kondo effect is
reflected by conductance peaks. In essence, the spin degrees of
freedom are used to enhance conduction. In a system with
nano-magnets and a Coulomb blockade [5]
the similar spin channels can be the only means of effective
conduction. This results in a smf which lasts for minutes and an
enormous magneto-resistance [5]. This implies the possibility of
``single electron memory'' in which the magnetic state is switched
by a single electron.
\\[4pt]
[1] J. C. Slonczewski, {\bf Current-Driven Excitation of
Magnetic Multilayers} J. Magn. Magn. Mater. 159, L1 (1996).
\\[0pt]
[2] Y. Tserkovnyak, A. Brataas, G. E. W. Bauer,
and B. I. Halperin, {\bf Nonlocal magnetization dynamics in
ferromagnetic heterostructures}, Rev. Mod. Phys. 77,
1375 (2005).
\\[0pt]
[3] S. E. Barnes and S. Maekawa, {\bf Generalization of
Faraday's Law to Include Nonconservative Spin Forces} Phys. Rev.
Lett. 98, 246601 (2007); S. E. Barnes and S. Maekawa, {\bf
Currents induced by domain wall motion in thin ferromagnetic
wires.} arXiv:cond-mat/ 0410021v1 (2004).
\\[0pt]
[4] S. E., Barnes, {\bf Spin motive forces,
measurement, and spin-valves.} J. Magn. Magn. Mat. 310, 2035-2037
(2007); S. E. Barnes, J. Ieda. J and S. Maekawa, {\bf Magnetic
memory and current amplification devices using
moving domain walls.} Appl. Phys. Lett. 89, 122507 (2006).
\\[0pt]
[5] Pham-Nam Hai, Byung-Ho Yu, Shinobu Ohya, Masaaki
Tanaka, Stewart E. Barnes and Sadamichi Maekawa, {\bf
Electromotive force and huge magnetoresistance in magnetic tunnel
junctions.} Submitted Nature, August, (2008).
*Supported in part by the EPSRC, UK.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.B22.1