III-V nanowires grown in a simple, homebuilt system.*

Semiconductor nanowires are promising experimental platforms for studying quantum transport due to their built-in one-dimensional confinement of charge carriers. To enable the study of III-V semiconducting nanowires, we built a simple tube furnace based MOCVD reactor. Growth of InP and InAs nanowires using trimethylindium, di-tert-butylphosphine and triethylarsenic has been studied as a function of temperature, pressure, precursor concentration and growth substrate. At optimal growth conditions, wires of 20-100 nm in diameter and up to 10 $\mu$m in length are achievable on InAs substrates. Characterization was performed using SEM, EDS and TEM; both wurtzite and zincblende structures have been observed. We will also present transport measurements of nanowires grown using this system. \vspace{8pt}