Gate-all-around carbon nanotube field-effect transistor

The ultra-thin body of carbon nanotubes allows for aggressive channel length scaling while maintaining excellent gate control. In general, a gate-all-around (GAA) structure is expected to be the ideal geometry that maximizes electrostatic gate control in FETs. Combining the ultra-thin body of a carbon nanotube with a GAA device geometry is a natural choice for ultimate device design. In this talk, we demonstrate a gate-all-around single wall carbon nanotube field-effect transistor. This is the first successful experimental implementation of an off-chip gate and gate-dielectric assembly with subsequent deposition on a suitable substrate.