2008 APS March Meeting
Volume 53, Number 2
Monday–Friday, March 10–14, 2008;
New Orleans, Louisiana
Session L19: Focus Session: Dopants and Defects in Semiconductors II
2:30 PM–5:06 PM,
Tuesday, March 11, 2008
Morial Convention Center
Room: 211
Sponsoring
Unit:
DMP
Chair: Michael Stavola, Lehigh University
Abstract ID: BAPS.2008.MAR.L19.1
Abstract: L19.00001 : Highly Enriched $^{28}$Si -- a New Testbed for Impurity and Defect Structure
2:30 PM–3:06 PM
Preview Abstract
Abstract
Author:
Mike Thewalt
(Simon Fraser University)
We have recently found that many optical transitions in Si,
including those
of shallow impurity bound excitons, and the electronic ground
state to
excited state transitions of shallow donors and acceptors, are
remarkably
sharper in highly enriched $^{28}$Si than in natural Si, due to
the removal
of inhomogeneous isotope broadening. This work is now being
extended to
deeper defects, many of which have been studied for decades in
natural Si
and were until now thought to be well understood. In $^{28}$Si,
due to the
narrowness of the individual transitions, changing the isotopic
species of
the defect constituents results in well-resolved components,
rather than the
`isotope shift' of the broad, unresolved inhomogeneously
broadened lines
observed in natural Si. This results in an `isotopic fingerprint'
of the
defect, revealing not only the participation of a given element
in the
defect, but also the number of atoms of that element which are
involved. We
have recently shown [1] that a well known Cu-containing defect
with a
no-phonon luminescence line at $\sim $1014 meV, which was thought
to be a
Cu-pair, and for which ab-initio calculations [2] based on a
pair-model
appeared to agree convincingly with experiment, in fact contains
four Cu
atoms. A related center at $\sim $944 meV, modelled in the past as a
different configuration of a Cu-pair [3], was shown to contain
three Cu
atoms [4]. We have now found that the 944 meV center also
contains one Ag
atom, and that another defect exists which contains two Cu and
two Ag atoms.
We will show that high resolution spectroscopy in highly enriched
$^{28}$Si
produces many more surprising results regarding the actual
constituents of
well known deep centers in Si.
\newline
[1] M.L.W. Thewalt et al., Physica B \underline {401-402}, 587
(2007).
\newline
[2] S.K. Estreicher et al., Phys. Rev. Lett. \underline {90},
035504 (2003).
\newline
[3] S.K. Estreicher, D. West and M. Sanati, Phys. Rev. B
\underline {72},
121201 (2005).
\newline
[4] A. Yang et al., Physica B \underline {401-402}, 593 (2007).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.MAR.L19.1