Magneto-transport Study on the nanometer-scaled wires made of Al$_{x}$Ga$_{1-x}$N/GaN heterostructures

The electronic characteristics of nano-wires made of high-mobility Al$_{x}$Ga$_{1-x}$N/GaN heterostructures have been studied. The Al$_{x}$Ga$_{1-x}$N/GaN samples were grown on GaN-template buffer layer by plasma-assisted molecular beam epitaxy. We obtained the mobility and carrier density of two-dimensional electron gas to be 9328 cm$^{2}$/Vs and 7.917x10$^{12}$ cm$^{-2}$ by conventional van der pauw Hall measurement at temperature of 77K, respectively. We prepared the samples of field-effect-transistors and reduced the width of the conducting channel from 1$\mu $m to 100 nm by Focus Ion Beam. The Shubnikov-de Haas oscillations were observed by magneto-resistance measurement at 0.3 K and the electronic properties for the samples of different channel widths were under investigation.