Growth and characterizations of m-plane GaN and InN on gamma-LiAlO$_{2}$ substrate grown by plasma-assisted molecular beam epitaxy

Non-polar nitrides are investigated in this report. Substrate used is gamma-phase LiAlO$_{2}$ (LAO) (100) grown by Czochralski pulling method. The in-plane lattice mismatch between the LAO (100) plane and the GaN (1-100) plane, is small with a lattice mismatch of [0001]GaN$\vert \vert $[010]LAO $\sim $ 0.3{\%} and [11\underline {2}0]GaN$\vert \vert $[001]LAO $\sim $1.7{\%}. M-plane GaN epilayer and InN were successfully grown by ultra-high vacuum plasma-assisted molecular beam epitaxy system. Extensive characterizations have been carried out which include x-ray diffraction theta/two-theta scan, rocking curve measurement, scanning electron microscopy, cathodoluminescence, photoluminescence, and Raman spectroscopy. Details will be presented.