Intrinsic and Extrinsic performance limits of graphene device on SiO$_{2}$*

We have measured the temperature-dependent resistivity of clean graphene devices on SiO$_{2}$ from 16K to 485K in ultra high vacuum[1]. Longitudinal acoustic phonons, intrinsic to graphene, give rise to the measured resistivity linearly dependent on temperature from 16 to $\sim $200K. Above 200 K, a sharp upturn in resistivity is observed due to remote interfacial phonon (RIP) scattering by the polar optical phonons of the SiO$_{2}$ substrate. Combining the contributions from intrinsic and extrinsic phonons, we are able to explain the complete temperature and carrier density dependence of the graphene resistivity on SiO$_{2}$. For a technologically relevant carrier density of n = 10$^{12}$ cm$^{-2}$ at room temperature, the intrinsic phonon scattering will only limit the mobility to $\sim $2x10$^{5}$ cm$^{2}$/Vs, while the extrinsic RIP scattering from SiO$_{2}$ will limit the mobility to $\sim $4x10$^{4}$cm$^{2}$/Vs. [1] J. H. Chen, et al., http://arxiv.org/abs/0711.3646