2006 APS March Meeting
Monday–Friday, March 13–17, 2006;
Baltimore, MD
Session W36: Focus Session: Optical Properties of Nanostructures of Si & GaAs
2:30 PM–5:30 PM,
Thursday, March 16, 2006
Baltimore Convention Center
Room: 339
Sponsoring
Unit:
DMP
Chair: Matt Doty, Naval Research Laboratory
Abstract ID: BAPS.2006.MAR.W36.5
Abstract: W36.00005 : Light from Silicon-Based Nanostructures
3:42 PM–4:18 PM
Preview Abstract
Abstract
Author:
Luca Dal Negro
(MIT \& Boston University)
Si-nanocrystals (Si-nc) embedded in SiO$_{2}$ glass matrices shows
undoubtedly efficient room temperature light emission under
optical pumping
and sizable optical gain and light amplification have been
demonstrated [1].
However, the presence of an insulating SiO$_{2}$ matrix prevents the
fabrication of reliable and efficient electrically-driven devices
and the
efficiency of light emission is severely curtailed by the slow
radiative
lifetime of Si-nc. An alternative possibility is offered by the
nucleation
of Si-nc in dielectric hosts with smaller band-gaps. In this talk
we will
show our results on light-emitting Si-rich silicon nitride films
(SRN) and
photonic structures obtained by Plasma Enhanced Chemical Vapor
Deposition
(PE-CVD) followed by low temperature (500-900\r{ }C) thermal
annealing[2].
The optical properties of SRN$_{ }$films are studied by
micro-Raman and
photoluminescence spectroscopy and demonstrate the presence of small
Si-clusters with nanosecond recombination time and negligible
emission
thermal quenching. The electrical transport properties of SRN
films are also
investigated and efficient charge injection at low bias voltages is
demonstrated. Additionally, we show that SRN matrices are
suitable for
efficient energy sensitization of Er ions emitting at 1.54 $\mu
$m. The
light emission mechanism in SRN nanostructures is studied by
DFT-LDA \textit{first principles}
calculations showing that, largely Stokes-shifted,
nanosecond-fast and
efficient light emission in PE-CVD deposited SRN samples
originates from
strongly localized excitons transitions at the surface of small
Si-nc ($\sim
$ 1-2 nm) embedded in Silicon nitride[3]. Additionally, we show
that the
presence of bridging nitrogen groups at the surface of small Si
nanocrystals
can explain the origin of the experimentally measured
Stokes-shift and the
nanosecond relaxation times[3].
\begin{enumerate}
\item L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, F. Priolo
``\textit{Optical gain in Si nanocrystals}'', Nature 408, 440, 23
November 2000.
\item L. Dal Negro, J.H. Yi, V. Nguyen, Y. Yi, J. Michel, L.C.
Kimerling, ``\textit{Spectrally enhanced light emission from
aperiodic photonic structures}'', Appl. Phys. Lett., \textbf{86},
261905, (2005)
\item L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A.
Williamson, G. Galli, \textit{Light Emission from Silicon-rich
Nitride Nanostructures, }Appl. Phys. Lett., submitted 2005
\end{enumerate}
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2006.MAR.W36.5