Electronic Structure of Ultra-thin Graphite

We report a high resolution angle resolved photoemission spectroscopy (ARPES) study on ultra-thin graphite samples, grown and characterized successfully in ultra-high-vacuum environment by a thermalization of SiC. We discuss similarities to and differences from the data obtained on bulk graphite. Notable differences include doping, electronic structure as a function of k$_{z}$ (momentum component perpendicular to graphene layer), line width, and substrate-induced features in ultra-thin graphite samples. We discuss the effects of grain boundaries, disorder, and symmetry breaking, as possible explanations of these differences.