Bulletin of the American Physical Society
76th Annual Gaseous Electronics Conference
Volume 68, Number 9
Monday–Friday, October 9–13, 2023; Michigan League, Ann Arbor, Michigan
Session GW1: Plasma Diagnostics and Etching
8:00 AM–9:30 AM,
Wednesday, October 11, 2023
Room: Michigan League, Henderson
Chair: Jean-Paul Booth, LPP-CNRS
Abstract: GW1.00004 : State-of-the-art plasma etch process and technologies for high aspect ratio pattern
9:00 AM–9:30 AM
Presenter:
Maju Tomura
(Tokyo Electron Miyagi Ltd.)
Authors:
Maju Tomura
(Tokyo Electron Miyagi Ltd.)
MASANOBU HONDA
(Tokyo Electron Miyagi Ltd.)
YOSHIHIDE KIHARA
(Tokyo Electron Miyagi Ltd.)
To address these issues, the novel gas chemistry in cryogenic temperature regime was developed. Novel gas with light-mass molecule enhanced the radical transport in HAR pattern. Then, cryogenic temperature regime not only suppress the spontaneous reaction at the sidewall but also enhanced adsorption of the radicals on the surface. Therefore, supply of etchant to the etch front was drastically increased. The novel process is capable of etching holes beyond 10 um depth with a diameter of approximately 100 nm.[1] The novel technology promises to advance HAR dielectric etch.
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