Bulletin of the American Physical Society
76th Annual Gaseous Electronics Conference
Volume 68, Number 9
Monday–Friday, October 9–13, 2023; Michigan League, Ann Arbor, Michigan
Session DR4: Plasma Semiconductor & RF Applications
1:30 PM–3:30 PM,
Thursday, October 12, 2023
Room: Michigan League, Hussey
Chair: Uwe Czarnetzki, Ruhr-University Bochum, Faculty of Physics and Astronomy
Abstract: DR4.00002 : Three-Dimensional Flow and Plasma Simulation for ICP Reactor with Different Injector Designs
1:45 PM–2:00 PM
Presenter:
Meihua Zhang
(Eugenus Inc.)
Authors:
Meihua Zhang
(Eugenus Inc.)
Yun Yang
(Eugenus Inc.)
Ryong Hwang
(Eugene Technology)
Jeonghee Jo
(Eugene Technology)
Sangdon Lee
(Eugene Technology)
Sergey Zaretskiy
(Eugene Technology)
Dongbeen Her
(Eugene Technology)
David Solomon
(Eugenus Inc.)
Both injectors include center nozzle and side nozzle, which is a necessary configuration to control flow distribution and uniformity. Firstly, the effects of flow amount for center nozzle and side nozzle on flow distribution are investigated. For this simulation, the total N2 flow amount goes into center and side nozzle keep the same, while only the mass flow rate ratio changes. Results shows that, the baseline injector design demonstrates better velocity uniformity near the wafer. Secondly, the commercial software, CFD-ACE+, was used for plasma simulations of ICP reactor. Antenna design consists of inner and outer coils to control center/edge N% concentration for this ICP reactor. Plasma simulations were conducted for both injector designs under different inner and outer coils current ratio 1:2 and 1:3, respectively. Experiments are performed for baseline injector design and a good agreement was achieved, which means the plasma model used in this study is reasonable. Simulation results show that, the two injectors exhibit slightly different bulk plasma distributions. Baseline injector shows better plasma potential and plasma density uniformity near the wafer.
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