Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session GF3: Plasma Deposition
1:30 PM–3:30 PM,
Friday, October 7, 2022
Sendai International Center
Room: Shirakashi 2
Chair: Masaru Hori, Nagoya University
Abstract: GF3.00005 : Deposition of Rutile TiO2 Thin Films Using high power pulsed magnetron sputtering
2:45 PM–3:00 PM
Presenter:
Miyuki Nishimura
(Meijo University)
Authors:
Miyuki Nishimura
(Meijo University)
Takayuki Ohta
(Meijo University)
TiO2 was synthesized while changing voltage which is applied to titanium target.
The working pressure was fixed to 3 Pa. The flow rates were 10 sccm, for Ar and O2 respectively ensuring a constant ratio O2/(Ar+O2) of 30%. The films were deposited. The pulse frequency and the pulse width were set at 500 Hz and 29 µs, respectively.
The X-ray diffraction (XRD) pattern corresponding to the sample grown at 550V exhibited an intense (101) anatase peak at the angle of 25.3°. For samples grown at 600V, However, intensity peaks appeared at 27.9° and 38.6°which are attributed to the rutile(110) and anatase (112) peaks, respectively. For sample grown at 670V, (110) peak clearly appeared, while the (101) and (112) peaks were absent. Anatase to rutile phase transformation occurs by ion bombardment.
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