75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session Index
Session FW5: Atomic Layer Processes
|
Show Abstracts |
Chair: Hiroki Kondo, Nagoya University, Japan
Room: Sendai International Center Shirakashi 1
|
|
Wednesday, October 5, 2022
2:30PM - 3:00PM
|
|
FW5.00001: Optimisation and Understanding of Plasma Enhanced Atomic Layer Deposition Processes Using Quasi In-situ X-ray Photoelectron Spectroscopy
Invited Speaker:
Robert O'Connor
|
Wednesday, October 5, 2022
3:00PM - 3:15PM
|
|
FW5.00002: Damage mitigation in atomic layer etching of GaN by cyclic exposure of BCl3 gas and F2 added Ar plasma at high substrate temperature
Shohei Nakamura, Atsushi Tanide, Masafumi Kawagoe, Soichi Nadahara, Kenji Ishikawa, Osamu Oda, Masaru Hori
|
Wednesday, October 5, 2022
3:15PM - 3:30PM
|
|
FW5.00003: Topographically-selective Atomic Layer Etching of SiO2 using fluorine-containing plasma
Airah P Osonio, Takayoshi Tsutsumi, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori
|
Wednesday, October 5, 2022
3:30PM - 4:00PM
|
|
FW5.00004: Plasma-assisted thermal-cyclic atomic-layer etching for selective removal of thin films
Invited Speaker:
Kazunori Shinoda
|
