Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session ER2: Plasma Etching
10:00 AM–12:00 PM,
Thursday, October 6, 2022
Sendai International Center
Room: Hagi
Chair: Hirotaka Toyoda
Abstract: ER2.00007 : Achieving selective etching of SiN and SiO2 over amorphous carbon during CF4/H2 by controlling substrate temperature
11:45 AM–12:00 PM
Presenter:
Shih-Nan Hsiao
(Nagoya University)
Authors:
Shih-Nan Hsiao
(Nagoya University)
Thi-Thuy-Nga Nguyen
(Nagoya University)
Takayoshi Tsutsumi
(Nagoya University)
Kenji Ishikawa
(Nagoya Univ)
Makoto Sekine
(Nagoya University)
Masaru Hori
(Nagoya Univ)
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