75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session Index
Session DT1: Plasma Surface Interaction I
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Show Abstracts |
Chair: Jan Trieschmann, Kiel University
Room: Sendai International Center Tachibana
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Tuesday, October 4, 2022
8:00AM - 8:15AM
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DT1.00001: Photoemission induced plasma breakdown
Brian Z Bentz, Kevin Youngman, Asif Iqbal, Yang Zhou, Peng Zhang
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Tuesday, October 4, 2022
8:15AM - 8:30AM
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DT1.00002: GEC Student Excellence Award Finalist Presentation - Dynamic surface surrogate model trained on atomistic data of AlN sputter depositions
Tobias Gergs, Thomas Mussenbrock, Jan Trieschmann
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Tuesday, October 4, 2022
8:30AM - 9:00AM
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DT1.00003: Strategies to Enhance Etch Selectivity During Fluorocarbon Plasma-Assisted Atomic Layer Etching of Silicon-Based Dielectrics
Invited Speaker:
Sumit Agarwal
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Tuesday, October 4, 2022
9:00AM - 9:15AM
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DT1.00004: Secondary electron emission due to atomic and molecular iodine ion bombardment
Lui Habl, Dmytro Rafalskyi, Trevor Lafleur
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Tuesday, October 4, 2022
9:15AM - 9:30AM
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DT1.00005: Evidence of the dominant production mechanism of ammonia in a H2/N2 plasma
James Ellis, Daniel Köpp, Norbert Lang, Jean-Pierre H van Helden
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