Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session DM2: Workshop I: Industrial Plasma Technologies
10:30 AM–5:00 PM,
Monday, October 3, 2022
Sendai International Center
Room: Tachibana
Chair: Hajime Sakakita, National Institute of Adv Industrial Science and Technology; Taisei Motomura, National Institute of Advanced Industrial Science and Technology
Abstract: DM2.00002 : Thermal cyclic atomic-level etching in 3D ULSI device fabrication
11:15 AM–12:00 PM
Presenter:
Hiroto Ohtake
(Hitachi High-Tech Corporation)
Author:
Hiroto Ohtake
(Hitachi High-Tech Corporation)
In this talk, I would like to summarize the history of atomic layer etching development and introduce our technology. For realizing the completely uniform lateral etchings, I think we might have two options: 1) self-limited modification, 2) high etchant density for surface reaction limitation. Regarding option 1, Prof. S. M. George team has evaluated various material ALEs by the ligand-exchange process. But they are very slow etching and cannot be applied to volume fabrication easily. Vapor etching can realize the option 2, however, they are also very slow because of low reaction rate. To meet the practical etching rates with completely uniform etching performances, I believe that we should consider the combination of thermal cyclic process and plasma process with unique gases.
We have developed a new etch tool which has IR lamp and ESC, which achieved reasonably quick heat-up to 300 deg.C in a few ten seconds and quick cooling-down to negative temperature. It also has a plasma source which can deliver enough amount of radicals through the ion shielding plate. In silicon etching, cyclic process of oxidation and oxide removal achieves precisely controlled and conformal removal. For oxide, vapor HF works well for uniform recess in high aspect ratio structure. Hydrofluorocarbon ALE is available in SiN etching. The new tool also provides the cyclic process of deposition and etching for good top-to-bottom uniformity in metal etching by using the plasma.
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