Bulletin of the American Physical Society
74th Annual Gaseous Electronics Conference
Volume 66, Number 7
Monday–Friday, October 4–8, 2021;
Virtual: GEC Platform
Time Zone: Central Daylight Time, USA
Session TF12: Plasma Applications |
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Chair: Abhishek Verma, Applied Materials, Inc. Room: Virtual GEC platform |
Friday, October 8, 2021 8:00AM - 8:15AM |
TF12.00001: Microplasma-Driven Atomic Layer Deposition of Aluminum Oxide Etch-Free Patterning, and Gallium Oxide-Based Flexible DUV Photodetector Jinhong Kim, Dane J Sievers, Sung-Jin Park, J. Gary Eden Aluminum oxide (Al2O3) and gallium oxide (Ga2O3) thin film have been deposited by arrays of microcavity plasmas assisted Atomic Layer Deposition (MALD). Al2O3 films were grown at 300 K by dissociating oxygen in an array of microcavity plasmas. Without additional etching process such as dry/wet etching, the deposition films at 300 K with patterning was accomplished by simple lift-off lithography. With this process, Al2O3 films having a lateral dimension of 1 - 10 µm and a thickness of ~ 68 nm were deposited. The oxygen and aluminum stoichiometric ratio for amorphous Al2O3 films has been measured by EDX,SIMs and RBS to be ~ 1.5 ± 0.1, demonstrating that negligible levels of impurities and oxygen vacancies exist in the films. |
Friday, October 8, 2021 8:15AM - 8:45AM |
TF12.00002: Optimizing the deposition rate and ionized flux fraction of a high power impulse magnetron sputtering discharge Invited Speaker: Martin Rudolph High power impulse magnetron sputtering (HiPIMS) is a physical vapor deposition technique with a high probability of target species ionization in the ionization region. Some of these ions escape the ionization region towards a substrate, where they supply additional energy and momentum to a growing film. However, most of the ions of the target species are back-attracted onto the target by an electric field in the ionization region. The loss in deposition rate in HiPIMS discharges compared to direct current magnetron sputtering discharges, at equal average power, can largely be explained by this effect. As only ions respond to the electric field, the ionization rate is usually closely linked to the loss in deposition rate. Here, we present an optimization scheme to maximize the deposition rate for a certain ionized flux fraction to the substrate. The scheme uses externally adjustable parameters, peak discharge current, pulse length, magnetic field strength and working gas pressure to manipulate internal discharge parameters, the probabilities of target species ionization and target ion back-attraction. The benefit of the optimization scheme can be quantified by the energy cost per target ion on the substrate, which for a well optimized discharge can be less than half of the cost for a non-optimized discharge. |
Friday, October 8, 2021 8:45AM - 9:00AM |
TF12.00003: Plasma Ion Doping for Semiconductor Applications Hongwen Yan, Hiro Miyazoe, Marinus Hopstaken, Sebastian Engelmann, Takashi Ando, Kevin Chan Plasma doping (PD) provides a potential solution in the search for a shallow, active or high concentration doping method that leaves minimum physical damages. That overcomes the limitations of conventional ion implantation in semiconductor applications. |
Friday, October 8, 2021 9:00AM - 9:15AM |
TF12.00004: KrCl* Far UV-C Microplasma Flat Lamp: Prevention of Airborne Transmission of Pathogens with Human Safety Sung-Jin Park, James G Eden A noble far UV-C radiation (typically at the wavelength range of 200-230 nm) has been introduced with a significant commercial and scientific interest because of its higher efficacy in inactivating airborne pathogens (including COVID-19 coronaviruses). Furthermore, the far UV-C wavelength has been known (reported) not to induce essentially any damage to skin or eyes even during the exposure against the treatment by the conventional germicidal lamp. |
Friday, October 8, 2021 9:15AM - 9:30AM |
TF12.00005: Water Interacting with Nanostructured Plasma Polymer Films Dirk Hegemann The use of plasma coatings is highly attractive to enhance biomaterials such as sensors, scaffolds, antibacterial surfaces and others. Recent progress in the understanding of plasma deposition processes on the nanoscale regarding gas phase activation and plasma-surface interaction enables the tailored structuring of ultrathin films providing new (near-)surface properties. To this end, it is discussed how the degree of functionality and crosslinking can be adjusted during film growth. Moreover, the role of water interaction with functional plasma polymer films gained more and more interest. Bilayers composed of two different functional group-containing layers were found to affect protein adsorption depending on the thickness of the covering layer. Similarly, hydrophobic cover layers with varying film density are explored to control water intrusion. Thus, a defined volume of water can be allowed to penetrate a nanoporous base layer. This hydration effect strongly influences protein adsorption of BSA likely due to ferroelectric order of water molecules. In addition, controlled drug release from a Ag reservoir is enabled for long-term antibacterial properties combined with anti-adhesiveness ready for industrial applications. |
Friday, October 8, 2021 9:30AM - 9:45AM |
TF12.00006: Plasma enhanced chemical vapour depositon of ZrO2 based layers Philipp A Maaß, Vitali Bedarev, Sebastian M. J Beer, Marina Prenzel, Marc Böke, Anjana Devi, Achim von Keudell Chemical vapour deposition (CVD) is a widely applied technique used for thin film deposition. The combination with a plasma source (PECVD) enables the fine-tuning of parameters, opening new possibilities for the fabrication of functional coatings, such as thin thermal barrier coatings. |
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