Bulletin of the American Physical Society
73rd Annual Gaseous Electronics Virtual Conference
Volume 65, Number 10
Monday–Friday, October 5–9, 2020; Time Zone: Central Daylight Time, USA.
Session YF4: Plasma Deposition ILive
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Chair: Costel Biloiu, Applied Materials Inc. |
Friday, October 9, 2020 1:00PM - 1:30PM Live |
YF4.00001: Plasma Deposition Of Oxide Materials for Photonics and Energy Invited Speaker: Mohamed Chaker Innovation in materials science and engineering resides in our ability to design new materials with tailored properties (electrical, optical, magnetic, etc.) by controlling their microstructure. One of the most powerful means to uniquely arrange matter at such scale is to use plasmas due to their unique ability to provide simultaneously a variety of particles such as ions, neutral atoms and radicals. In this presentation, we will focus on the growth of various oxide materials in the form of thin films, including undoped and doped vanadium dioxide, samarium nickelate, titanium oxide using either pulsed laser deposition or dielectric-barrier discharges. There are exploited for various applications including photonics and energy. [Preview Abstract] |
Friday, October 9, 2020 1:30PM - 1:45PM Live |
YF4.00002: Towards a better control of plasma polymerization: a case study of plasma produced polyaniline Dario Sciacqua, Erik von Wahl, Andrea Jagodar, Cedric Pattyn, Thomas Lecas, Thomas Strunskus, Eva Kovacevic, Johannes Berndt The plasma based synthesis of thin films is frequently used to deposit ultra-thin and pinhole-free films on a great class of different substrates. However, the synthesis of thin films by means of low temperature plasmas is rather complex due to the great number of different species (neutrals, radicals, ions) that are created in the plasma volume. All these species can contribute to the species flux that strikes the substrate and affect there -often in a synergistic manner- the growth of thin films in terms of both the growth speed and the film properties. The control of the species fluxes emerging from the plasma is therefore the main challenge in technological applications. This contribution deals with polymerization processes in a capacitively coupled RF discharge operated in a mixture of argon and aniline. The role of the positive ions for the deposition of thin films in this gas mixture as well as the potential contribution of radicals (as a function of the pumping speed) are in the focus of this contribution. Plasma analysis has been done by means of microwave interferometry and mass spectrometry. The deposited materials have been investigated by FT-IR, NEXAFS and Ellipsometry. [Preview Abstract] |
Friday, October 9, 2020 1:45PM - 2:00PM Live |
YF4.00003: RF CCP synthesis of vertically aligned graphene: temperatures and walls Eva kovacevic, Andrea Jagodar, Erik von Wahl, Dario Sciacqua, Thomas Lecas, N.M. Santhosh, Uros Cvelbar, Johannes Berndt The interest in novel, often carbonaceous materials with large effective surfaces, high conductivity, stability, is growing due to the downsizing of electrical devices and the demand for low-cost new materials. These materials show great potential applications for electrochemical devices, transistors and biosensors, or as even as analogue materials in laboratory astrophysics. On the other hand there is a need for green, solvent free, industry near procedures, where mass production or 3D coatings of such materials can be obtained. New developments in plasma technology, as well as old but gold processes, are enabling such productions rather easy. In this work, specifically, the plasma synthesis of carbon based nanomaterials will be presented. The examples concern vertically aligned (2D) graphene (VAG) nanowalls synthesized in low temperature, low pressure capacitively coupled RF plasmas. The most interesting result is a rather low substrate temperature (for this type of material) starting from 450\textdegree C. The 2D materials are grown on different kind of metallic substrates, as well as on SI-wafers. As a specific case we will present N doped and functionalized VAGs, with emphasis on the wall conditioning as an important factor for the production process. [Preview Abstract] |
Friday, October 9, 2020 2:00PM - 2:15PM On Demand |
YF4.00004: Penetration of hydrogen atoms and termination of dangling bonds in amorphous carbon films Hiroki Kondo, Yasuyuki Ohashi, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori The various properties of amorphous carbon (a-C) films have been extensively studied with the expectation of a wide range of applications, such as tribological coatings, etching masks, and so forth. One of the general issues of a-C is how to terminate dangling bonds. In this study, to clarify the reaction of H atoms in the a-C films, a penetration of H atoms and termination of dangling bonds were investigated using an in-situ electron spin resonance (ESR) measurement system. 50 or 100 nm-thick a-C films were grown by a plasma-enhanced chemical vapor deposition system. The H radical irradiation for 5 minutes under 100 Pa, 30 sccm of H$_{\mathrm{2}}$ flow rate, and 50 W of microwave power, and the in-situ ESR spin density measurement were repeated alternately. The spin densities decreased from 0 to 15 minutes, then saturated. Converting to areal density, they decreased by the same amount regardless of the film thickness. This means that the H atoms penetrated to a certain depth and inactivated the defects. Calculating based on the initial defect density, it corresponds to terminating the whole defects in the 5 nm-thick regions. This result indicates that the dangling bonds in the a-C surface can be terminated by H atoms at room temperature. [Preview Abstract] |
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