Tuesday, October 29, 2019
10:00AM - 10:15AM
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DT2.00001: Multi-Fluid and PIC Simulation of Ion Energy Distributions through Different Aspect Ratio Holes in Capacitively Coupled Plasma
Yao Du, Yuhua Xiao, Steven Shannon, Sang Ki Nam
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Tuesday, October 29, 2019
10:15AM - 10:30AM
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DT2.00002: Pattern Dependent Profile Distortion in High Aspect Ratio Plasma Etching of SiO$_{\mathrm{2}}$ and SiO$_{\mathrm{2}}$-Si$_{\mathrm{3}}$N$_{\mathrm{4}}$-SiO$_{\mathrm{2}}$ Stacks
Shuo Huang, Sang Ki Nam, Seungbo Shim, Mark J. Kushner
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Tuesday, October 29, 2019
10:30AM - 11:00AM
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DT2.00003: Modeling and controlling of defect generation in electronic devices during plasma etching processes---an optimization methodology of plasma-induced damage
Invited Speaker:
Koji Eriguchi
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Tuesday, October 29, 2019
11:00AM - 11:15AM
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DT2.00004: Why does an SF$_{\mathrm{6}}$ plasma etch silicon much faster than any other fluorine atom generating plasma?
Vincent M Donnelly, Priyanka Arora, Tam Nguyen
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Tuesday, October 29, 2019
11:15AM - 11:30AM
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DT2.00005: High-aspect-ratio organic-pattern formation with self-limiting manner by controlling plasma process based on substrate temperature measurement.
Makoto Sekine, Yusuke Fukunaga, Takayoshi Tsutsumi, Kenji Ishikawa, Hiroki Kondo, Masaru Hori
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Tuesday, October 29, 2019
11:30AM - 11:45AM
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DT2.00006: On finding low Global Warming Potential (GWP) precursor for SiO$_{\mathrm{2}}$ etching through plasma radical measurement
Chul Hee Cho, SiJun Kim, JangJae Lee, YeongSeok Lee, SangHo Lee, InHo Seong, ShinJae You
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Tuesday, October 29, 2019
11:45AM - 12:00PM
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DT2.00007: Student Excellence Award Finalist: Computational study on the formation of Nickel hexafluoroacetylacetonate complexes Ni(hfac)$_{\mathrm{2}}$ on a rough NiO surface during thermal atomic layer etching (ALE) Processes
Abdulrahman Basher, Marjan Krstic, Michiro Isobe, Tomoko Ito, Karin Fink, Masato Kiuchi, Kazuhiro Karahashi, Takae Takeuchi, Wolfgang Wenzel, Satoshi Hamaguchi
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