Bulletin of the American Physical Society
69th Annual Gaseous Electronics Conference
Volume 61, Number 9
Monday–Friday, October 10–14, 2016; Bochum, Germany
Session SR2: Inductively Coupled Plasmas II |
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Chair: Jean Paul Booth, Ecole Polytechnique Room: 2a |
Thursday, October 13, 2016 2:00PM - 2:15PM |
SR2.00001: Simulating industrial plasma reactors - A fresh perspective Sebastian Mohr, Sara Rahimi, Jonathan Tennyson, Oliver Ansell, Jash Patel A key goal of the presented research project PowerBase is to produce new integration schemes which enable the manufacturability of 3D integrated power smart systems with high precision TSV etched features. The necessary high aspect ratio etch is performed via the BOSCH process. Investigations in industrial research are often use trial and improvement experimental methods. Simulations provide an alternative way to study the influence of external parameters on the final product, whilst also giving insights into the physical processes. This presentation investigates the process of simulating an industrial ICP reactor used over high power (up to 2x5 kW) and pressure (up to 200 mTorr) ranges, analysing the specific procedures to achieve a compromise between physical correctness and computational speed, while testing commonly made assumptions. This includes, for example, the effect of different physical models and the inclusion of different gas phase and surface reactions with the aim of accurately predicting the dependence of surface rates and profiles on external parameters in SF6 and C4F8 discharges. [Preview Abstract] |
Thursday, October 13, 2016 2:15PM - 2:30PM |
SR2.00002: A hybrid model of biased inductively coupled discharges$^{\mathrm{1}}$ Deqi Wen, Michael A Lieberman, Quanzhi Zhang, Yongxin Liu, Younian Wang A hybrid model, i.e. a global model coupled bidirectionally with a parallel Monte-Carlo collision (MCC) sheath model, is developed to investigate an inductively coupled discharge with a bias source. To validate this model, both bulk plasma density and ion energy distribution functions (IEDFs) are compared with experimental measurements in an argon discharge, and a good agreement is obtained. On this basis, the model is extended to weakly electronegative Ar/O$_{\mathrm{2}}$ plasma. The ion energy and angular distribution functions versus bias voltage amplitude are examined. The different ion species (Ar$^{\mathrm{+}}$, O$_{\mathrm{2}}^{\mathrm{+}}$, O$^{\mathrm{+}})$ have various behaviors because of the different masses. A low bias voltage, Ar$^{\mathrm{+}}$ has a single energy peak distribution and O$^{\mathrm{+}}$ has a bimodal distribution. At high bias voltage, the energy peak separation of O$^{\mathrm{+}}$ is wider than Ar$^{\mathrm{+}}$. $^{\mathrm{1}}$This work has been supported by the National Nature Science Foundation of China (Grant No. 11335004) and Specific project (Grant No 2011X02403-001) and partially supported by Department of Energy Office of Fusion Energy Science Contract DE-SC000193 and a gift from the Lam Research Corporation. [Preview Abstract] |
Thursday, October 13, 2016 2:30PM - 2:45PM |
SR2.00003: Modeling of inductively coupled plasmas at low pressure conditions Sotiris Mouchtouris, George Kokkoris Low pressure inductively coupled plasmas are simulated with a hybrid plasma model [1] which couples fluid with Maxwell's equations and a Monte Carlo (MC) particle tracing model for the calculation of the ion mobility in the sheaths. The case study is Ar plasma in the GEC reference cell. Instead of using a MC model for the calculation of the electron energy distribution function (EEDF), a generalized EEDF is formulated; it depends on the local plasma potential and captures the deviations from the Maxwellian EEDF at low pressure conditions [2]. The model results are compared with spatially resolved measurements [3] of electron density, electron temperature, plasma potential, and ion current density on the wafer at different power and pressure conditions. Additionally, the ion energy and angular distributions on the wafer are calculated by a MC model and validated by a comparison with experimental measurements. [1] Mouchtouris S and Kokkoris G 2016 Plasma Sources Sci. Technol. 25 025007 [2] Godyak V A, Piejak R B and Alexandrovich B M 2002 Plasma Sources Sci. Technol. 11 525-43 [3] Miller P A, Hebner G A, Greenberg K E, Pochan P D and Aragon B P 1995 J. Res. Natl Inst. Stand. Technol. 100 427 [Preview Abstract] |
Thursday, October 13, 2016 2:45PM - 3:00PM |
SR2.00004: Structure Control of Vertical Nanographene toward Electrochemical and Bio Applications Mineo Hiramatsu, Hiroki Kondo, Masaru Hori Carbon nanowalls (CNWs) as platform based on vertical nanographene with large surface area offer great promise for providing emerging applications such as nanostructured electrodes for electrochemical sensing, biosensing, energy conversion, and scaffold for cell culturing. CNWs are composed of few-layer graphene standing almost vertically on the substrate, forming a self-supported network of maze-like wall structures. From a practical viewpoint, the structures of CNWs including spacing between adjacent nanowalls, nanowall height, thickness of individual nanowall, crystallinity and alignment should be controlled according to the usage of CNWs. The morphologies of CNWs depend on source gases, pressure, process temperature as well as the type of plasma used for the growth. In this study, CNWs were synthesized using inductively coupled plasma (ICP) employing methane/hydrogen/argon system.We investigated systematically the effects of ions incident upon the substrate, radical flow, and catalytic metals on the change of CNW morphologies. We report the current status of the control of CNW structures by the control of ions and radicals during the growth process as well as nucleation control, together with examples of electrochemical applications using CNWs. [Preview Abstract] |
Thursday, October 13, 2016 3:00PM - 3:15PM |
SR2.00005: Research on the mechanism of multiple inductively coupled plasma source for large area processing JangJae Lee, SiJun Kim, DaeWoong Kim, KwangKi Kim, YoungSeok Lee, ShinJae You In the plasma processing, inductively coupled plasma having the high-density is often used for high productivity. In large area plasma processing, the plasma can be generated by using the multi-pole connected in parallel. However, in case of this, it is difficult for power to be transferred to plasma uniformly. To solve the problem, we studied the mechanism of inductively coupled plasma connected in parallel. By using the transformer model, the multiple ICP source is treated. We also studied about the change of the plasma parameters over the time through the power balance equation and particle balance equation. [Preview Abstract] |
Thursday, October 13, 2016 3:15PM - 3:30PM |
SR2.00006: Synthesis of Silicon Nanoparticles in Inductively Coupled Plasmas Aram H. Markosyan, Romain Le Picard, Steven L. Girshick, Mark J. Kushner The synthesis of silicon nanoparticles (Si-NPs) is being investigated for their use in photo-emitting electronics, photovoltaics, and biotechnology. The ability to control the size and mono-disperse nature of Si-NPs is important to optimizing these applications. In this paper we discuss results from a computational investigation of Si-NP formation and growth in an inductively coupled plasma (ICP) reactor with the goal of achieving this control. We use a two dimensional numerical model where the algorithms for the kinetics of NP formation are self-consistently coupled with a plasma hydrodynamics simulation [1]. The reactor modeled here resembles a GEC reference cell through which, for the base case, a mixture of Ar/SiH$_{\mathrm{4}}=$70/30 flows at 150 sccm at a pressure of 100 mTorr. In continuous wave mode, three coils located on top of the reactor deliver 150 W. The electric plasma potential confines negatively charged particles at the center of the discharge, increasing the residence time of negative NPs, which enables the NPs to potentially grow to large and controllable sizes of many to 100s nm. We discuss methods of controlling NP growth rates by varying the mole fraction and flow rate of SiH$_{\mathrm{4}}$, and using a pulsed plasma by varying the pulse period and duty cycle. [1] R. Le Picard, A.H. Markosyan, D. Porter, S.L. Girshick, M.J. Kushner, Plasma Chem. Plasma Proc. 36, 941 (2016). [Preview Abstract] |
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