Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session SF2: Carbon Related Materials Deposition
8:00 AM–9:15 AM,
Friday, October 16, 2015
Room: 308 AB
Chair: Jyh-Ming Ting, National Cheng Kung University
Abstract ID: BAPS.2015.GEC.SF2.4
Abstract: SF2.00004 : Effect of atomic composition on hardness of Si-containing a-C:H films deposited by ultra-high-speed PECVD at over 100 micron/h*
8:45 AM–9:00 AM
Preview Abstract Abstract
Authors:
Hiroyuki Kousaka
(Nagoya University)
Yasuyuki Takaoka
(Nagoya University)
Noritsugu Umehara
(Nagoya University)
*Acknowledgement: This work was supported partially by a ``Grant for Advanced Industrial Technology Development (No. 11B06004d)'' in 2011-2015 from the NEDO of Japan.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.SF2.4
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