Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session NR2: Plasma CVD/Radical Assisted CVD
8:00 AM–9:30 AM,
Thursday, October 15, 2015
Room: 308 AB
Chair: Kazunori Koga, Kyushu University
Abstract ID: BAPS.2015.GEC.NR2.3
Abstract: NR2.00003 : Low temperature synthesis of silicon nitride thin films deposited by VHF/RF PECVD for gas barrier application
8:30 AM–8:45 AM
Preview Abstract Abstract
Authors:
Jun S. Lee
(NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST) and Sungkyunkwan University)
Kyung S. Shin
(NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST) and Sungkyunkwan University)
B.B. Sahu
(NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST) and Sungkyunkwan University)
Jeon G. Han
(NU-SKKU Joint Institute for Plasma Nano Materials (IPNM), Center for Advanced Plasma Surface Technology (CAPST) and Sungkyunkwan University)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.NR2.3
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