Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session IW2: Ion Assisted Deposition
8:00 AM–9:30 AM,
Wednesday, October 14, 2015
Room: 308 AB
Chair: Mineo Hiramatsu, Meijo University
Abstract ID: BAPS.2015.GEC.IW2.3
Abstract: IW2.00003 : In-situ monitoring of plasma ion assisted deposition (PIAD) processes*
8:30 AM–8:45 AM
Preview Abstract Abstract
Authors:
Jens Harhausen
(Leibniz Institute for Plasma Science and Technology, Felix-Hausdorff-Stra\ss e 2, 17489 Greifswald, Germany)
R\"udiger Foest
(Leibniz Institute for Plasma Science and Technology, Felix-Hausdorff-Stra\ss e 2, 17489 Greifswald, Germany)
Detlef Loffhagen
(Leibniz Institute for Plasma Science and Technology, Felix-Hausdorff-Stra\ss e 2, 17489 Greifswald, Germany)
*Funded by the German Federal Ministry of Education and Research (BMBF) under grant 13N13213).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.IW2.3
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