Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session DT2: Plasma Surface Interactions I
8:00 AM–9:45 AM,
Tuesday, October 13, 2015
Room: 308 AB
Chair: Toshihiko Iwao, Tokyo Electron, Inc.
Abstract ID: BAPS.2015.GEC.DT2.6
Abstract: DT2.00006 : The Effect of N2 Plasma on Atomic Hydrogen Surface Recombination
9:30 AM–9:45 AM
Preview Abstract Abstract
Authors:
S. Smith
(MKS Instruments)
C.Y. Tai
(MKS Instruments)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.DT2.6
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