Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session IW2: Ion Assisted Deposition
8:00 AM–9:30 AM,
Wednesday, October 14, 2015
Room: 308 AB
Chair: Mineo Hiramatsu, Meijo University
Abstract ID: BAPS.2015.GEC.IW2.4
Abstract: IW2.00004 : ICP-Enhanced Sputter Deposition for Reactivity Control and Low-Temperature Formation of a-IGZO Films*
8:45 AM–9:00 AM
Preview Abstract Abstract
Authors:
Yuichi Setsuhara
(Osaka University)
Keitaro Nakata
(Osaka University)
Yoshikatsu Satake
(Osaka University)
Kosuke Takenaka
(Osaka University)
Giichiro Uchida
(Osaka University)
Akinori Ebe
(EMD Corporation)
*This work was partly supported by ASTEP (JST) and Grant-in-Aid for Challenging Exploratory Research (JSPS).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.IW2.4
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