Bulletin of the American Physical Society
64th Annual Gaseous Electronics Conference
Volume 56, Number 15
Monday–Friday, November 14–18, 2011; Salt Lake City, Utah
Session QRP1: Poster Session II: Plasma Appl. II; Charged Particle Collisions II; Plasma Sources II; Plasma Data Exchange Project; Plasma Diag. Tech. II; Plasma Modeling/Simulations II; Basic Plasma Phenomena II
3:30 PM,
Thursday, November 17, 2011
Room: Exhibit Hall AB
Abstract ID: BAPS.2011.GEC.QRP1.13
Abstract: QRP1.00013 : Etching rate and surface roughness of niobium samples and plasma properties of Ar/Cl$_{2}$ discharge in a SRF cavity.
Preview Abstract Abstract
Authors:
Janardan Upadhay
(Old Dominion University, Department of Physics, Center for Accelerator Science, Norfolk, VA 23529)
Svetozar Popovic
(Old Dominion University, Department of Physics, Center for Accelerator Science, Norfolk, VA 23529)
Leposava Vuskovic
(Old Dominion University, Department of Physics, Center for Accelerator Science, Norfolk, VA 23529)
Anne-Marie Valente
(Thomas Jefferson National Accelerator Facility, Newport News, VA 23606)
Larry Phillips
(Thomas Jefferson National Accelerator Facility, Newport News, VA 23606)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.GEC.QRP1.13
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