60th Gaseous Electronics Conference
Volume 52, Number 9
Tuesday–Friday, October 2–5, 2007;
Arlington, Virginia
Session Index
Session DT1: Materials Processing in Low Pressure Plasmas I: Etching, deposition, new materials
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Chair: Shahid Rauf, Applied Materials
Room: Doubletree Crystal City Crystal Ballroom A
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Tuesday, October 2, 2007
1:30PM - 2:00PM
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DT1.00001: A new generation of cryogenic processes for silicon deep etching
Invited Speaker:
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Tuesday, October 2, 2007
2:00PM - 2:15PM
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DT1.00002: Student Excellence Award Finalist: Modeling of Deep Reactive Ion Etching of Si under plasma molding in 2f-CCP in SF$_6$/O$_2$
Fukutaro Hamaoka, Takashi Yagisawa, Toshiaki Makabe
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Tuesday, October 2, 2007
2:15PM - 2:30PM
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DT1.00003: Student Excellence Award Finalist: Neutral production in SF$_6$/SiCl$_4$ inductively coupled plasmas
C. Duluard, R. Dussart, L.E. Pichon, E.H. Oubensaid, P. Lefaucheux, P. Ranson, M. Puech
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Tuesday, October 2, 2007
2:30PM - 2:45PM
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DT1.00004: Atomic-scale model analysis of the feature profile evolution during Si etching in chlorine- and bromine-containing plasmas
Shoki Irie, Yugo Osano, Masahito Mori, Koji Eriguchi, Kouichi Ono
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Tuesday, October 2, 2007
2:45PM - 3:00PM
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DT1.00005: Effect of VUV Radiation on Fluorination of Polypropylene in Low Pressure Plasmas
Yang Yang, Mark Strobel, Seth Kirk, Mark J. Kushner
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Tuesday, October 2, 2007
3:00PM - 3:15PM
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DT1.00006: Effect of gas mixture ratio on atomic oxygen density in an inductively coupled plasma in O$_{2}$/Ar mixture
Toshikazu Sato, Toshiaki Makabe
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Tuesday, October 2, 2007
3:15PM - 3:30PM
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DT1.00007: Student Excellence Award Finalist: Ion Flux and Energy Measurement at a Pulsed Biased Electrode in a C$_{2}$H$_{2}$:Argon Inductively Coupled Plasma During DLC Growth.
A. Baby, C.M.O. Mahony, P.D. Maguire
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