2006 59th Annual Gaseous Electronics Conference
Tuesday–Friday, October 10–13, 2006;
Columbus, Ohio
Session Index
Session RR1: Material Processing in Low Pressure Plasmas
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Chair: Jean-Paul Booth, Ecole Polytechnic
Room: Holiday Inn Salon CD
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Thursday, October 12, 2006
1:30PM - 2:00PM
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RR1.00001: The Role of Plasma Science in Materials Processing
Invited Speaker:
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Thursday, October 12, 2006
2:00PM - 2:15PM
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RR1.00002: Spatial and temporal structure of a sheath formed in a 300 mm, dual-frequency capacitive argon discharge
Ed Barnat, Paul Miller, Greg Hebner, Alex Paterson, John Holland
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Thursday, October 12, 2006
2:15PM - 2:30PM
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RR1.00003: Study of Nano-Contact Etching Characteristics Using C6F6 Gas.
Jong-Woo Sun, Sung-Chan Park, Chul Ho Shin, Chang Jin Kang, Han Ku Cho, Joo Tae Moon
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Thursday, October 12, 2006
2:30PM - 2:45PM
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RR1.00004: Etching of high-$k$ HfO$_{2}$ films in high-density chlorine-containing plasmas without rf biasing
Kouichi Ono, Keisuke Nakamura, Daisuke Hamada, Kazushi Osari, Koji Eriguchi
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Thursday, October 12, 2006
2:45PM - 3:00PM
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RR1.00005: Study on the characteristics of etching organic hard mask for patterning high aspect ratio contact holes
Hyun-Sil Hong, Sung-Il Cho, Mi-Na Choi, Chang-Jin Kang, Han-Ku Cho, Joo-Tae Moon
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Thursday, October 12, 2006
3:00PM - 3:15PM
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RR1.00006: Low-pressure Plasma Fluorination of Polypropylene
Yang Yang, Mark Strobel, Seth Kirk, Hyacinth Cabibil, Mark J. Kushner
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Thursday, October 12, 2006
3:15PM - 3:30PM
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RR1.00007: A modeling of inductively coupled plasma in SF$_{6}$/O$_{2}$ for deep reactive ion etching of silicon
Toshikazu Sato, Toshiaki Makabe
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