Bulletin of the American Physical Society
54th Annual Meeting of the APS Division of Atomic, Molecular and Optical Physics
Volume 68, Number 7
Monday–Friday, June 5–9, 2023; Spokane, Washington
Session M09: Progress Towards Quantum Memories: Quantum Memory, Networks and State Engineering
2:00 PM–3:48 PM,
Wednesday, June 7, 2023
Room: 206 D
Chair: Philipp Preiss, Max Planck Institute of Quantum Optics
Abstract: M09.00001 : Ultra-Broadband, Low-Noise Quantum Memory in Atomic Barium Vapor with 95% Storage Efficiency*
2:00 PM–2:12 PM
Presenter:
Kai B Shinbrough
(University of Illinois Urbana-Champaign)
Authors:
Kai B Shinbrough
(University of Illinois Urbana-Champaign)
Benjamin D Hunt
(University of Colorado, Boulder)
Sehyun Park
(Rice University)
Kathleen B Oolman
(University of Illinois Urbana-Champaign)
Tegan Loveridge
(University of Illinois Urbana-Champaign)
J. Gary Eden
(University of Illinois Urbana-Champaign)
Virginia O Lorenz
(University of Illinois Urbana-Champaign)
Our quantum memory is based on the ground (6s2 1S0), excited (6s6p 1P1), and metastable (6s5d 1D2) orbital states of atomic barium in a Λ-type configuration. The barium vapor is created in an 800-900 °C heat pipe oven with 0-1000 torr argon buffer gas. The ground-excited transition at 553.5 nm features large and tunable homogeneous collisional broadening, controlled via the buffer gas pressure, and a peak optical depth of d = 50. The memory operates in the so-called absorb-then-transfer (ATT) regime, in which the signal field [O(1 photon), 500 fs] is linearly absorbed along the ground-excited transition, then the resulting atomic polarization is transferred to a so-called spin wave by application of a strong [O(10 uJ), 100 fs] π-pulse control field along the excited-metastable transition at 1500 nm. Our memory lifetimes are limited to the O(ns) level due to motional dephasing [0.49(1) ns measured memory lifetime]. The memory experiment is repeated at a repetition rate of 1 kHz, and the total end-to-end efficiency of the memory at 900 °C is 31(1)%, limited by available control field power. We observe the largest total memory efficiency at small, non-zero two-photon detuning. We call this effect near-off-resonant memory (or NORM) operation, which we believe balances resonant reabsorption loss and finite available control field power.
*This work was funded in part by NSF grant Nos. 1640968, 1806572, 1839177, 1936321, and 2207822; and NSF Award DMR1747426.
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