ab initio study of the electronic properties of hydrogenated roundish SiC quantum dots*

Silicon carbide quantum dots (SiC-QD), recently have been the most investigated material due to its potential applications in the different fields such as medicine, energy, and electronic fields [1–3]. In this work, we study the electronic properties on roundish hidrogenated 3C SiC-QD with three different diameters and C-rich, by means of density functional theory. Our results exhibit flat states in the CBM and VBM, besides it is observed the quantum confinament effects, this means that electronic band gap increase while the diameter decrease. The formation energy of the system shows that the most stable disposition is the diameter is the diameter three followed by, and the most unestable system is diameter one. These Open up the oportunity to design new nanodevices due to hidrogen produce N-doping in this systems

Keywords: SiC; Quantum Dots; DFT; electronic properties

References

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[2] H. Ouarrad, F. Z. Ramadan, and L. B. Drissi. Engineering silicon-carbide quantum dots for

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[3] Mognetti, B., Barberis, A., Marino, S., Di Carlo, F., Lysenko, V., Marty, O., & Géloën, A. (2010). Preferential killing of cancer cells using silicon carbide quantum dots. Journal of nanoscience and nanotechnology, 10(12), 7971-7975.