In-plane Selective Area InSb Networks for Scalable Majorana Devices

Theoretical proposals predict that networks of Indium Antimonide (InSb) nanowires are suitable for Majorana based quantum computing.

Here we show In-plane Selective Area Networks (InSANe) of InSb nanowires grown catalyst free with a high crystal quality. Although InSb has a large lattice mismatch with Indium Phosphide (InP) (high bandgap substrate material), we manage to synthesize single crystal networks. Transmission electron microscopy (TEM) analysis confirms a zincblende InSb nanowire with a single twin defect at the interface with the underlying substrate. Low temperature transport measurements (e.g. Aharonov-Bohm interference) demonstrate a large electron coherence length of up to 10 μm. An epitaxial superconductor on these networks induces a hard superconducting gap and gives rise to a 2e-periodic Coulomb blockade, making this platform very promising for Majorana topological quantum computing.