InSb Nanowires for Quantum Devices

Indium-antimonide (InSb) nanowires (NWs) are considered prime candidates for hosting topological states, known as Majorana zero modes, a key ingredient for future fault-tolerant quantum computing. More specifically, the properties of InSb, such as its high electron mobility and strong spin-orbit coupling, grant it with the ability to deliver stringent requirements needed for bearing topological phases when combined with a superconductor.
Yet, synthesis of this superior material remains a challenge. InSb NWs have been so far synthesized on top of a “stem” of a foreign material, posing two main hurdles; incorporation of the stem material into the grown InSb segment and limiting the length of the InSb NW, restricting it to a maximum of about 3.5 μm. Here, we report growth of pure zinc blende InSb nanowires tens of microns long. These NWs demonstrate significantly higher electron mobility values than obtained for InSb NWs on stems. Thus, this technique meets the strict length and purity prerequisites for realizing Majorana devices and provides flexibility for intricate device designs.