Bulletin of the American Physical Society
APS March Meeting 2018
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session P11: Dopants and Defects in Semiconductors - Oxides
2:30 PM–5:30 PM,
Wednesday, March 7, 2018
LACC Room: 303A
Sponsoring Units: DMP DCOMP FIAP
Chair: Joel Varley, Lawrence Livermore National Laboratory
Abstract: P11.00005 : The Production of Hydrogen Defects in Ga2O3*
3:42 PM–3:54 PM
We have recently discovered an O-H vibrational line at 3427 cm-1 in beta-Ga2O3. This line was found to be strongly polarized along the  direction of a (-201)-oriented wafer and has been assigned to a VGa-2H complex . Surprisingly, this defect has been found to be most effectively produced by a two-step annealing process. A first anneal in an H2 ambient at 900°C produces a weak line at 3437 cm-1. A second anneal in flowing N2 at 450°C greatly increases the intensity of the 3437 cm-1 line. These results show that a “hidden” form of H can be produced in Ga2O3 that can be converted into the VGa-2H complex by an addition thermal annealing treatment in an inert ambient. Similarly, the implantation of protons into Ga2O3 at room temperature produces a weak line at 3427 cm-1 that is made roughly 4 times more intense by a subsequent anneal at 450°C. The identity of this “hidden” form of H in Ga2O3 remains as a puzzle.
 P. Weiser, M. Stavola, W. B. Fowler, Y. Qin, and S. J. Pearton, to be published.
*Supported by NSF Grant DMR 1160756.
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