Bulletin of the American Physical Society
APS March Meeting 2018
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session P11: Dopants and Defects in Semiconductors - Oxides
2:30 PM–5:30 PM,
Wednesday, March 7, 2018
LACC Room: 303A
Sponsoring Units: DMP DCOMP FIAP
Chair: Joel Varley, Lawrence Livermore National Laboratory
Abstract: P11.00004 : Surveying acceptor dopants in beta-Ga2O3*
3:30 PM–3:42 PM
With a wide band gap, high critical breakdown voltage, and low-cost substrates, Ga2O3 is a promising material for power electronics. As with many wide-band-gap semiconductors, obtaining better control over its electrical conductivity is critically important. Since both theory and experiment have indicated holes self-trap in Ga2O3, efficient p-type doping is not expected. However, a better understanding of acceptor dopants will be necessary for the full development of this material. In this work, the properties of group-II and group-V acceptor impurities in beta-Ga2O3 are explored using first-principles calculations based on hybrid density functional theory. Acceptor ionization energies and formation energies of these potential dopants are compared, and optical transitions are also determined for comparison with experiment.
*This work was supported by the NRL base program.
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