Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00260 : CVD graphene growth on different substrates
Author:
Graphene growth on solid substrates have the advantage of growing
high
quality epitaxial graphene. In this sence it is important to choose
substrates and precursors having in mind the final application
and an
efficiency if the process. In this work we grow graphene by CVD
on three
different substrates, changing temperatures and precursor
concentration. For
graphene growth on copper foil we heat the sample up to 1000
$^{\circ}$ C in the
presence of a hydrogen and acethylene flux. The same process is
performed
for graphene growth on copper oxide thin films. These thin films
($\sim $400
nm) are prepared by conventional sputtering on SiO$_{2}$
substrates and the
reduced inside the preparation chamber. The advantage of this
process is
that copper undergoes a dewetting process during graphene growth,
so at the
end we have graphene suported on the SiO$_{2}$ substrate. To monitor
graphene growth we use Raman spectrometer.
For graphene growth on Ru(0001) we heat the substrate,
temperature between
840$^{\circ}$C and 1000$^{\circ}$C in ultra high vacuum (UHV). We
introduce ethylene
in the vacuum chamber and cool down the sample. To monitor
graphene growth
we use Low Energy Electron Diffraction.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.260
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