Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00259 : Scanning Tunneling Microscopy Study of Grain Boundaries in Graphene Grown by Chemical Vapor Deposition on Copper Foil
Author:
There have been few scanning tunneling microscopy studies of
graphene grown
by CVD on Cu [1] and no atomic scale studies of the electronic
properties of
the films' grain boundaries. We present the electronic nature of
grain
boundaries in polycrystalline graphene grown by CVD on Cu foil and
transferred to SiO2 substrates. These grain boundaries are
continuous across
large protrusions and wrinkles in the graphene and other surface
topography.
We observe misorientation angles of approximately 7\r{ }, 23\r{
}, and 30\r{
} across the grain boundaries and standing wave patterns adjacent
to the
grain boundaries with a decay length on the order of 1 nm. The
spectroscopy
shows enhanced conduction in empty states at the grain
boundaries. The
graphene is grown on 1.4 mil copper foil by CVD. After growth the
graphene
was transferred onto a SiO$_{2}$/Si substrate using PMMA and
FeCl$_{3}$.
Raman spectroscopy and atomic force microscopy are used to
characterize the
roughness and quality of the graphene. The sample was degassed in
the
UHV-STM system at 600 -- 700 \r{ }C for 24 hours.\\[4pt]
[1] X. Li et al., Science 324, 1312 (2009)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.259
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