Session W19: Dopants and Defects in Semiconductors IV
2:30 PM–5:18 PM, Thursday, March 13, 2008
Morial Convention Center Room: 211
Sponsoring Unit:
DMP
Chair: Matthew McCluskey, Washington State University
Abstract ID: BAPS.2008.MAR.W19.9
Abstract: W19.00009 : Bismuth related changes in the electronic properties of high quality dilute GaAs$_{1-x}$Bi$_{x}$.
4:06 PM–4:18 PM
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Abstract 
Authors:
Lekhnath Bhusal
(National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401)
Denis Karaiskaj
(National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401)
Ryan France
(National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401)
Aaron Ptak
(National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401)
Angelo Mascarenhas
(National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401)
Tom Tiedje
(AMPEL, Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada, V6T 1Z4)
In this work we will present the electronic and optical properties of dilute GaAs$_{1-x}$Bi$_{x}$ epitaxial layers for the range of samples with concentration up to $\sim $3{\%}. Variation of fundamental band gap (E$_{0})$ and the transition from the spin-orbit split off valance band (E$_{0}+\Delta )$ using the contactless modulated electroreflectance will be presented as a function of temperature (77-300K) and Bi concentrations. We also will discuss the isoelectronic codoping of Bi and nitrogen, as the excellent quality of GaAsBi samples presented in the work opens the path for the codoping of Bi with N to improve the electronic properties of dilute nitride III-V alloys.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.MAR.W19.9