### Session P22: Focus Session: Organic Electronics: FETs II

8:00 AM–10:48 AM, Wednesday, March 12, 2008
Morial Convention Center Room: 214

Chair: Michael Chabinyc, Palo Alto Research Center

Abstract ID: BAPS.2008.MAR.P22.7

### Abstract: P22.00007 : High Carrier Density and High Hole Mobilities of Ion Gel Gated Polymer Thin-Film Transistors

9:36 AM–9:48 AM

Preview Abstract MathJax On | Off   Abstract

#### Authors:

Jiyoul Lee
(Department of Chemical Engineering and Materials Science, University of Minnesota)

C. Daniel Frisbie
(Department of Chemical Engineering and Materials Science, University of Minnesota)

Timothy P. Lodge
(Departments of Chemistry and Chemical Engineering and Materials Science, University of Minnesota)

We report the comprehensive characterization of ion gel gated polymer thin-film transistors (IG-PTFTs), in which PQT-12 was used as the active layer and an ion gel comprising a polymer network swollen with an ionic liquid was used as the gate dielectric. The high capacitance of ion gels ($>$10 $\mu$F/cm2) can induce a very large hole density ($\sim$ 2 x 10$^{14}$ charges/cm$^{2})$ in the channel of polymer semiconductor layers in IG-PTFTs, leading to low operation voltages, high hole mobilities of $>$ 1 cm$^{2}$/V·s, and high ON currents. High ionic conductivities of ion gels ($>$ 1 mS/cm) enable fast response time ($\sim$ 1.5 ms at 80 {\%} ON/OFF) of IG-PTFTs. Temperature dependent measurements were carried out with IG-PTFTs. In the high temperature range (310 K $\sim$ 360 K), the device showed faster response time and little hysteresis due to increasing ionic conductivity with the operating temperature. At low temperature (20 K $\sim$ 185 K) where the ions are immobile, high ON currents between source and drain can be maintained with weak temperature dependence. Overall, the results demonstrate that the IG-PTFTs offer opportunities to probe transport of high 2-D charge carrier densities in semiconductors.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.MAR.P22.7