Session L35: Optoelectronic Devices and Applications

2:30 PM–5:18 PM, Tuesday, March 11, 2008
Morial Convention Center Room: 227

Chair: Fatima Toor, Princeton University

Abstract ID: BAPS.2008.MAR.L35.6

Abstract: L35.00006 : Integrated Plasmonic Terahertz Detector and a Gate Controlled Schottky Barrier$^{1}$

3:30 PM–3:42 PM

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Authors:

G.C. Dyer
(Dept. of Physics, UCSB)

E.A. Shaner
(Sandia National Laboratory)

M.C. Wanke
(Sandia National Laboratory)

J.L. Reno
(Sandia National Laboratory)

G.R. Aizin
(SUNY, New York)

J.D. Crossno
(SBCC)

S.J. Allen
(UCSB)

We have successfully fabricated and tested a plasmonic terahertz detector that integrates a gate controlled lateral Schottky diode$^{2}$. As demonstrated in prior work$^{3-4}$, a grating gated two dimensional electron gas can be the basis for a finely tuned terahertz detector. The addition of an independently biased gate adjacent to the drain yields striking Schottky-like behavior and offers increased sensitivity when biased to pinch off. We present measurements and models of the Schottky-like I-V characteristics, resonant plasmonic response ($\sim$50 GHz width), and bias-dependent terahertz rectification. The monolithic Schottky diode plasmonic detector points the way to a plasmonic detector with increased sensitivity. $^{1}$Supported through NSF NIRT Grant No. ECS0609146, and in collaboration with Sandia, a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. $^{2}$V. Ryzhii, et al., Jap. J. Appl. Phys. \textbf{45}, L1118 (2006). $^{3}$E.A. Shaner, et al., Appl. Phys. Lett. \textbf{90}, 181127 (2007). $^{4}$G.R. Aizin, et al., Appl. Phys. Lett. \textbf{91}, 163507 (2007).

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.MAR.L35.6