Session H40: Semiconductors: Growth and Characterization
8:00 AM–10:24 AM, Tuesday, March 6, 2007
Colorado Convention Center Room: 503
Sponsoring Unit:
FIAP
Chair: Howard Branz, Energy Renewable Research Laboratory
Abstract ID: BAPS.2007.MAR.H40.7
Abstract: H40.00007 : Improved Schottky Contacts on n-type SiC using ZrB$_{2}$
9:12 AM–9:24 AM
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Abstract 
Authors:
Tom Oder
(Youngstown State University)
Pamela Martin
(Youngstown State University)
Adetayo Adedeji
(Georgia Sourthern University)
Tamara Isaacs-Smith
(Auburn University)
John Williams
(Auburn University)
We present results on ZrB$_{2}$ Schottky contacts deposited on n-type SiC by DC magnetron sputtering at temperatures between 20 $^{o}$C and 800 $^{o}$C. The Schottky barrier heights determined by current-voltage measurements, increased with the deposition temperature from 0.87 eV for contacts deposited at 20 $^{o}$C to 1.07 eV for those deposited at 600 $^{o}$C. The RBS spectra of these contacts revealed a substantial decrease in oxygen peak with increase in the deposition temperature and showed no reaction at the ZrB$_{2}$/SiC interface. The barrier heights of the contacts annealed in nitrogen for 20 mins at 200 $^{o}$C to 500 $^{o}$C using a rapid thermal processor revealed only a slight increase. These results indicate improvement in the electrical properties and thermal stability of ZrB$_{2}$ on n-type SiC when the contacts are deposited at elevated temperatures, making them attractive for high temperature applications.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2007.MAR.H40.7