Bulletin of the American Physical Society
61st Annual Gaseous Electronics Conference
Volume 53, Number 10
Monday–Friday, October 13–17, 2008; Dallas, Texas
Session XF1: Material Processing II
1:30 PM–3:30 PM,
Friday, October 17, 2008
Room: Salon E
Chair: S.G. Walton, Naval Research Laboratory
Abstract ID: BAPS.2008.GEC.XF1.4
Abstract: XF1.00004 : Porous Low-k Material Etch For 32 nm and Beyond
2:15 PM–2:30 PM
Preview Abstract Abstract
Authors:
Yifeng Zhou
(Applied Materials, Inc.)
Qingjun Zhou
(Applied Materials, Inc.)
Ryan Patz
(Applied Materials, Inc.)
Hairong Tang
(Applied Materials, Inc.)
Jeremiah Pender
(Applied Materials, Inc.)
Michael Armacost
(Applied Materials, Inc.)
Catherine Labelle
(Advanced Micro Devices)
David Horak
(IBM Research)
Collaborations:
Applied Materials, Inc., Advanced Micro Devices, IBM Research
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.XF1.4
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